Three-Dimensional Statistical Simulation of Gate Leakage Fluctuations Due to Combined Interface Roughness and Random Dopants
نویسندگان
چکیده
A three-dimensional simulation methodology allowing statistical study of the direct tunnelling gate current fluctuations in realistic nano-scale metal–oxide–semiconductor field effect transistors (MOSFETs) is presented. The approach has been applied to study the gate leakage fluctuations due to the combined effect of oxide thickness variation (OTV) and discrete random dopants (RD) in an example 25 nm gate length MOSFET. OTV is the primary source of gate leakage fluctuations at high gate voltage, while RD are the main factor at high drain voltage. Both OTV and RD contribute to an average increase in the magnitude of the gate leakage with respect to that of a uniform device. This reflects the exponential sensitivity of the direct tunnelling current. [DOI: 10.1143/JJAP.46.2112]
منابع مشابه
Intrinsic Threshold Voltage Fluctuations in Decanano MOSFETs Due to Local Oxide Thickness Variations
Intrinsic threshold voltage fluctuations introduced by local oxide thickness variations (OTVs) in deep submicrometer (decanano) MOSFETs are studied using three-dimensional (3-D) numerical simulations on a statistical scale. Quantum mechanical effects are included in the simulations employing the density gradient (DG) formalism. The random Si/SiO2 and gate/SiO2 interfaces are generated from a po...
متن کاملPolysilicon Gate Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations in Sub-100 nm MOSFET’s with Ultrathin Gate Oxide
In this paper, we investigate various aspects of the polysilicon gate influence on the random dopant induced threshold voltage fluctuations in sub-100 nm MOSFET’s with ultrathin gate oxides. The study is done by using an efficient statistical three-dimensional (3-D) “atomistic” simulation technique described elsewhere [1]. MOSFET’s with uniform channel doping and with low doped epitaxial channe...
متن کاملIntrinsic Parameter Fluctuations in Decananometer MOSFETs Introduced by Gate Line Edge Roughness
In this paper, we use statistical three-dimensional (3-D) simulations to study the impact of the gate line edge roughness (LER) on the intrinsic parameters fluctuations in deep decananometer (sub 50 nm) gate MOSFETs. The line edge roughness is introduced using a Fourier synthesis technique based on the power spectrum of a Gaussian autocorrelation function. In carefully designed simulation exper...
متن کاملIntrinsic parameter fluctuations in conventional MOSFETs until the end of the ITRS: A statistical simulation study
Variability in device characteristics will affect the scaling and integration of next generation nano-CMOS transistors. Intrinsic parameter fluctuations introduced by random discrete dopants, line edge roughness and oxide thickness fluctuations are among the most important sources of variability. In this paper the variability introduced by the above sources is studied in a set of well scaled MO...
متن کاملA 3-D Atomistic Study of Archetypal Double Gate MOSFET Structures
The double gate MOSFET architecture has been proposed as a possible solution to allow the scaling of MOSFETs to the sub-30 nm regime, particularly due to its inherent resistance to short-channel effects. The use of lightly doped, or even undoped, channels means that such devices should be inherently resistant to random dopant induced fluctuations which will be one of the major obstacles to MOSF...
متن کامل